In a world undergoing an energy transition, the search for innovative and sustainable solutions has become essential. It is in this context that onsemi, a company specialized in semiconductors, is accelerating its efforts to develop silicon carbide. This promising material paves the way for significant advances in electrification and renewable energy.
Meeting Global Energy Challenges
In response to the escalation of climate crises and the growing demand for energy, governments and industries are committing to ambitious climate goals to mitigate environmental impacts and secure a sustainable future. The transition to electrification, which reduces carbon emissions and adopts renewable energy resources, is a key element in this process.
EliteSiC M3e MOSFET Technology
In a significant advancement to accelerate this global transition, onsemi has introduced its latest generation of silicon carbide technology, the EliteSiC M3e MOSFETs. This platform plays a fundamental role in optimizing next-generation electrical systems, enabling enhanced performance and increased reliability at a reduced cost per kW.
Diverse Applications and Improved Efficiency
The EliteSiC M3e MOSFETs can operate at higher switching frequencies and voltages while minimizing energy conversion losses. This technology is essential for various automotive and industrial applications, such as electric vehicle drive systems, DC fast chargers, solar inverters, and energy storage solutions. It will also facilitate a transition to more efficient and powerful data centers.
Performance Improvement and Cost Reduction
Thanks to the unique design and manufacturing capabilities of onsemi, the EliteSiC M3e technology achieves a significant reduction in conduction and switching losses. Compared to previous generations, it can reduce conduction losses by 30% and cutoff losses by up to 50%. Consequently, this technology ensures the robustness and stability of the platform, making it a preferred choice for critical electrification applications.
Evolution of Power Density
Global energy demands are expected to increase exponentially over the next decade, necessitating an increase in power density in semiconductors. onsemi is leading innovation with its silicon carbide roadmap, optimizing cell structures to push more current through a smaller surface area, thereby increasing power density.
Continuous Progress and Advanced Integration
With each new generation of silicon carbide, onsemi maximizes performance and reduces packaging size. By applying Moore’s Law concepts to the development of silicon carbide, onsemi is able to develop multiple generations in parallel and accelerate its roadmap to bring several new EliteSiC products to market by 2030.
The EliteSiC M3e MOSFET in the standard TO-247-4L package is now available for sampling.
EliteSiC M3e Technology Comparison
| Feature | Improvement |
|---|---|
| Conduction Loss Reduction | 30% |
| Cutoff Loss Reduction | 50% |
| Power Density Increase | 20% |
| Specific Resistance | Lowest in the industry |
